词语导航
基本信息
词语：晶体管性能
繁体：晶體管性能
拼音：jīng tǐ guǎn xìng néng
英语翻译
【计】 transistor performance
分词翻译
晶体管的英语翻译：
transistor
【计】 MOS transistor; npn
【化】 transistor
能的英语翻译：
ability; able; be able to; can; capable; energy; skill
【化】 energy
【医】 energy
翻译例句
1. SOI技术用于减少器件电容和提高晶体管性能。
SOI technology is used to reduce the device capacitance and increase transistor performance.
2. 一种影响是在保持、甚至改善栅极漏电水平的同时改善晶体管性能。
One affect is to improve the transistor performance while retaining or even improving the level of gate leakage.
3. 现在研究者正在努力优化器件结构、石墨烯性质和栅极电介质以提高晶体管性能。
The team is now busy working on improving the performance of the transistors by optimizing device structure, graphene quality and the gate dielectric.
4. 实验结果表明，该技术能够有效降低多晶硅薄膜的界面态密度，提高多晶硅薄膜晶体管性能。
The interface state density of poly-Si thin film was reduced and the properties of poly-Si thin film transistors were improved using this technique.
5. 然而，有机场效应晶体管性能的快速进步，主要得益于新型有机半导体材料方面的研究进展。
However, the rapid improvements of OFET"s performances mostly profit from research achievements in new organic semiconductor materials.
6. “常青藤之桥”前景看好——英特尔公司表示，与2d的晶体管相比，全新的晶体管性能提升37%，同时耗电量则不到前者的一半。
Ivy Bridge is promising — Intel says its new transistors will provide up to a 37% performance increase and consume less than half the power than their 2-d counterparts.
7. 构成晶体管的硅常常要和其他原子掺杂以改变其导电性能。
The silicon of which transistors are made is frequently doped with other elements, to affect its electrical properties.
8. 如果出现了过多错误种类的原子，事情也一样糟糕，会影响到晶体管的导电性能。
Too many atoms of the wrong sort, though, can be equally bad, interfering with a transistor"s conductivity.
9. 然而由于生产过程中的恶劣条件，石墨烯晶体管的性能不可避免地受到了影响。
However, the graphene transistor performance was inevitably degraded due to the harsh fabrication processes.
10. 由BIMOS型运放和VMOS场效应晶体管的巧妙配合，使仪器具有很高的精度和很好的性能。
Through the ingenious cooperation of BIMOS op amplifier and VMOS FET (filed effect transistor), making the instrument have higher precision and better performance.
11. 本文介绍两步硼扩散工艺，它对改善台面功率晶体管的性能极有帮助。
This paper introduces two steps B-diffusion technology, rt is very helpful to improve the properties of mesa power transistors.
12. 本文讨论面结型晶体管变频性能的分析。
This paper describes a detailed analysis of conversion properties of junction transistors.
13. 最近几年，薄膜晶体管液晶显示器(TFT - LCD)技术取得了快速而显著的进步，其性能超过了PD P、CRT以及投影显示。
In recent years, technologies for thin-film-transistor liquid crystal displays (TFT-LCD) have made fast and dramatic advancement with performance surpassing PDP, CRT, and projectors.
14. TBDR需要分配更多的晶体管来进行覆盖，而且是部分延迟的，理论上留给原生性能更少的晶体管。
TBDR needs more transistors allocated for the tiling and deferred parts, leaving conceptually less transistors for "raw performance".
15. 如果AMD的晶体管数量增加一倍，它可以增加一倍的性能。
If AMD doubles its transistor count, it could almost double performance.
16. 本文着重介绍全晶体管化X波段地面散射计的设计、结构与性能指标。WwW.wentIyi.CoM
This article describes design construction and characterization of a transistorized X-band ground-based scatterometer.
17. 基于单电子系统半经典模型，分析了电阻耦合单电子晶体管的电学特性，得到其电学性能不随背景电荷分布变化的特点。
According to the semi classical model, by means of electrical characteristics analysis of R SET, it was proposed that the electrical performance of R SET was not affected by the background charge.
18. 我做这些前瞻性预测大约30年了，晶体管周期的成本，可用以衡量电子产品的价格性能。
I"ve been making these forward-looking predictions for about 30 years. And the cost of a transistor cycle, which a measure of the price performance of electronics, comes down about every year.
19. 基于上述分析，在对传统的结构进行修改之后，以增加工艺复杂性为代价，在保证原有结构的情况下，能够得到性能令人满意的纵向PN P晶体管。
Per above said, it is possible to improve PNP transistor by modifying the existing structure, increasing process complexity while maintaining original device"s performance.
20. 你熟悉这种晶体管放大器的性能吗？
Are you familiar with the performance of this type of transistor amplifier?
21. 其次，对提高有机薄膜晶体管的电学性能的研究。
Second, the electrical properties of organic thin film transistors with the modification layers are investigated.
22. 作为一个例子，介绍了电子波衍射晶体管的原理、结构、制造和性能。
As an example, an electron wave diffraction transistor is presented, including its principle, structure, performance and its fabrication.
23. 这些原因导致了PNP双极晶体管的输出性能差强人意。
As a result, output character of PNP bipolar transistor is barely satisfying.
24. 本发明的薄膜晶体管具有光敏退化性小、迁移率高，响应速度快、柔性可弯曲、性能稳定性好的优点。
The thin film transistor of the invention has the advantages of small photosensitive degeneration, high migration rate, fast response speed, flexibility and good stability of performance.
25. 它采用数字脉冲集成电路取代早先的晶体管震荡电路，性能更稳定，操作更安全、方便。
It makes use of digital pulse IC circuits to replace the old transistor oscillator circuits and has great improvement in stability, security and convenience.
26. 主要结论为通过合理地安排工艺步骤，能够在对原有结构不产生影响的情况下，得到性能令人满意的纵向PN P晶体管。
Major conclusion is: it is possible to achieve ideal vertical PNP transistor by appropriately re-arranging process steps without affecting the original structure.
27. NPN晶体管在性能方面通常优于它们对应的PNP晶体管。
NPN transistors are normally superior to their PNP counterpart in performance.
28. 研究了有机薄膜场效应晶体管的源漏接触电阻和沟道电阻对器件性能的影响，结果表明接触电阻是影响器件性能的主要因素。
The channel resistance and the source-drain contact resistance of OTFT were investigated, and the results indicated that the latter is the main factor to affect the electric performances of OTFTs.
29. 研究了有机薄膜场效应晶体管的源漏接触电阻和沟道电阻对器件性能的影响，结果表明接触电阻是影响器件性能的主要因素。
The channel resistance and the source-drain contact resistance of OTFT were investigated, and the results indicated that the latter is the main factor to affect the electric performances of OTFTs.
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