词语导航
基本信息
词语：极晶体
繁体：極晶體
拼音：jí jīng tǐ
英语翻译
【电】 polar crystalWWW.weNTiYI.cOM
分词翻译
极的英语翻译：
bally; cruelly; extreme; fearfully; mighty; pole
【医】 per-; pole; polus
晶体的英语翻译：
crystal; crystalloid
【化】 crystal
【医】 Crys.; crystal
翻译例句
1. 研究了低温多晶硅发射极晶体管的频率特性及其温度关系。
The temperature dependence of frequency characteristics of PET is researched on.
2. 采用标准分立双极元件，对双极晶体管瞬态辐射光电流分流补偿法进行了实验验证。
Experiment using discrete bipolar transistors has been performed to verify the effect of the photocurrent compensation method.
3. 同时，采用专用芯片SG3525来产生脉宽调制电路，由IR2110组成的驱动电路来驱动绝缘门极双极晶体管（IGBT）。
Special chips, such as SG3525 and IR2110 are also used to generate PWM and to drive the IGBT.
4. 在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
5. 机械晶体管，更确切地可以称之为纳米电子机械系统（NEMS）晶体管，它可以在源极和漏极之间机械地构建或消除连接。
The mechanical transistor, more properly called a nano-electromechanical systems (NEMS) transistor, creates and destroys the connection between source and drain mechanically.
6. 我意愿为细胞间的两极空间展现晶体结构，为解毒而允许更大的渗透性。
I intend to embody the crystalline structure for the space between the cells that allows for greater permeability for the purposes of detoxification.
7. 通常参考每个象素被驱赶的活跃的基体展示透过一只薄膜晶体三极管在玻璃上沈积。
Usually refers to an active matrix display in which each pixel is driven by a thin film transistor deposited on the glass.
8. 在半导体中的源极区和漏极区可以限定晶体管栅极长度。
Source and drain regions in the semiconductor may define a transistor gate length.
9. 薄膜晶体三极管的缩写。
Abbreviation of Thin Film Transistor.
10. 拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特准谐振设计展示出一次侧传导电磁干扰降低的优势。
The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.
11. 只有一个外部晶体管所需的变容二极管，线路驱动。
Only one external transistor is required for varactor-line driving.
12. 研究人员通过使用热电阻和热电容对集成电路中异质连接双极型晶体管的热效应进行建模分析。
The researchers modelled the thermal effects of a heterojunction bipolar transistor in an integrated circuit using thermal resistors and thermal capacitors.
13. 于是，只要我们能让晶体管的发射极电流保持恒定，它就能保持发射极电流为恒定值。
Therefore, if we have a way of holding emitter current constant through a transistor, the transistor will work to regulate collector current at a constant value.
14. 设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
15. 半导体、二极体、双极电晶体、场效电晶体、电晶体放大器、频率响应、算放大器、差动及多极放大器、积体电路。
Semiconductor diodes bipolar junction transistors field-effect transistors transistor amplifiers frequency response operational amplifiers differential and multistage amplifiers integrated circuits.
16. 机械晶体管，更确切地可以称之为纳米电子机械系统晶体管，它可以在源极和漏极之间机械地构建或消除连接。
The mechanical transistor, more properly called a nano-electromechanical systems transistor, creates and destroys the connection between source and drain mechanically.
17. 在微波双极型晶体管中，收集区的厚度是影响其截止频率的一个重要因素。
The thickness of collector is one of the factors that limit cut-off frequency in microwave bipolar transistors.
18. 本文对晶体二极管引线光亮电镀锡的可焊性进行了研究。
This article conducts a research on the weldability of crystal diode lead wire luminous electrotinning.
19. 新型双极结型场效应晶体管(BJFET)兼有双极型和单极场效应两种器件的功能特点。
The new bipolar junction field effect transistor (BJFET) has the features of both bipolar and junction field effect devices.
20. 晶体三极管的输入、出特性曲线测试，是模拟电子技术最基本的实验之一。
The test of characteristic curve for input and output of crystal triode is one of the most basic experiments in simulating electronic technology.
21. 本文阐述了利用驻波法对微波晶体检波二极管进行分段定标的方法。
A subsection calibration method for microwave crystal diode detector using stationary wave curve is presented in the paper.
22. 通过对二极管激光器端面抽运激光晶体工作特点的分析，提出了长方形激光晶体热模型。
Through analysis for the performance features of laser crystal end-pumped by a diode laser, a quadrate laser crystal thermal model is established.
23. 概述了双极功率晶体管二次击穿机理。
Second breakdown mechanisms of bipolar power transistor is summarized.
24. 晶体管中发射极和集电极之间的区域。
The region in a transistor between the emitter and the collector.
25. 本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
The paper expounds MOS system power element"s characters, insulated gate bipolar transistor and integration type power element"s technology and its applications.
26. 晶体的点阵常数是晶体的重要参数，它的改变是极细微的。
The crystal lattice constant is an important parameter of the crystal and it changes extremely slightly.
27. 晶体三极管是电子电路中的最基本元件。
The triode transistor is the most basic equipment of electronic circuit.
28. 根据极平投影作晶体图和计算机绘图原理，本文建立了一种新的晶体形态计算机绘图系统。
According to the principle of V. Goldschmidt "s gnomonic projection and crystal computer graphics, a new system of computer graphics of crystal shape is presented in the paper.
29. 介绍了绝缘门极双极性晶体管（IGBT）的基本结构、工作原理、开关特性，以及在焊接逆变器中的应用。
The paper introduces the basic structure, working principle and switching feature of IGBT and its application to the converter used for welding.
30. 介绍了绝缘门极双极性晶体管（IGBT）的基本结构、工作原理、开关特性，以及在焊接逆变器中的应用。
The paper introduces the basic structure, working principle and switching feature of IGBT and its application to the converter used for welding.
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